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世纪芯再次成功解密CY9C6264-70SNI芯片

分类：CYPRESS系列单片机解密 | 发布:admin | 查看: | 发表时间:2010-9-2

关于CY9C6264-70SNI芯片的特征描述供客户参考了解CY9C系列芯片的主要功能，如需了解CY9C6264-70SNI芯片解密详情

other types of nonvolatile memory.更多芯片解密资料在http://www.voipphone.com.cn/

Functional Description

The CY9C6264-70SNI is a high-performance CMOS nonvolatile

RAM employing an advanced magnetic RAM (MRAM)

process. An MRAM is nonvolatile memory that operates as a

fast read and write RAM. It provides data retention for more

than ten years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast

writes and high write cycle endurance makes it superior to

The CY9C6264-70SNI operates very similarly to SRAM devices.

Memory read and write cycles require equal times. The MRAM

memory is nonvolatile due to its unique magnetic process.

Unlike BBSRAM, the CY9C6264-70SNI is truly a monolithic nonvol-

atile memory. It provides the same functional benefits of a fast

write without the serious disadvantages associated with

modules and batteries or hybrid memory solutions.

These capabilities make the CY9C6264-70SNI ideal for nonvolatile

memory applications requiring frequent or rapid writes in a

byte wide environment.

The CY9C6264-70SNI is offered in both commercial and industrial

temperature ranges.

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